New graphene-based material promises leap forward in semiconductors

Graphene continues to amaze scientists with all the new facets of its "talent". This time we are talking about the use of a superconducting monatomic layer of carbon used to create two-dimensional materials that will find their embodiment in lasers, sensors and electronics of the next generation.

Materials scientists at the University of Pennsylvania were the first to synthesize two-dimensional gallium nitride by encapsulating graphene. As a result, the material has received excellent electronic properties and strength.

Multidimensional gallium nitride is also known as a wide gap semiconductor, allowing electronic devices to operate at much higher voltages, frequencies and temperatures than conventional semiconductors. Growing gallium nitride in two-dimensional form using graphene densifies the structure, transforming it into wide-gap semiconductors with a large margin of potential.

The graphene-coated material works in the entire range of the ultraviolet spectrum, which creates prospects for its use in lasers and other electro-optical devices.

To grow graphene, the researchers used a silicon carbide substrate, which created a perfectly smooth surface when in contact with other materials.

Gallium atoms are sandwiched between two layers of graphene, and the added nitrogen initiates a chemical reaction that results in the formation of ultrathin sheets of gallium nitride with encapsulated graphene.